XRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition

DOI: 10.4236/ampc.2013.31A012   PDF   HTML   XML   6,852 Downloads   11,562 Views   Citations


AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering spectroscopy (RBS) and it appears that XRD intensity does not show a linear increase with the film thickness but a correlation with the stress, i.e., deviation of the lattice parameter of the film from that of bulk. The film composition and impurities have been analyzed by ion beam techniques. Effects of high-energy ion beams are briefly presented on atomic structure (whether stress relaxation occurs or not), surface morphology and optical properties.

Share and Cite:

N. Matsunami, H. Kakiuchida, M. Sataka and S. Okayasu, "XRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition," Advances in Materials Physics and Chemistry, Vol. 3 No. 1A, 2013, pp. 101-107. doi: 10.4236/ampc.2013.31A012.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg and S. L. Gilbert, “Epitaxially Grown AlN and Its Optical Band Gap,” Journal of Applied Physics, Vol. 44, No. 1, 1973, pp. 292-296. doi:10.1063/1.1661876
[2] C. Ozgit, I. Donmez, M. Alevli and N. Biyikli, “Self-Limiting Low-Temperature Growth of Crystalline AlN Thin Films by Plasma-Enhanced Atomic Layer Deposition,” Thin Solid Films, Vol. 520, 2012, pp. 2750-2755. doi:10.1016/j.tsf.2011.11.081
[3] K. M. Taylor and C. Lenie, “Some Properties of Aluminum Nitride,” Journal of the Electrochemical Society, Vol. 107, No. 4, 1960, pp. 308-314. doi:10.1149/1.2427686
[4] G. A. Slack, “Nonmetallic Crystals with High Thermal Conductivity,” Journal of Physics and Chemistry of Solids, Vol. 34, No. 2, 1973, pp. 321-335. doi:10.1016/0022-3697(73)90092-9
[5] Z. An, C. Men, Z. Xu, P. K. Chu and C. Lin, “Electrical Properties of AlN Thin Films Prepared by Ion Beam Enhanced Deposition,” Surface & Coatings Technology, Vol. 196, No. 1-3, 2005, pp. 130-134. doi:10.1016/j.surfcoat.2004.08.169
[6] X. Song, R. Fu and H. He, “Frequency Effects on the Dielectric Properties of AlN Film Deposited by Radio Frequency Reactive Magnetron Sputtering,” Microelectronic Engineering, Vol. 86, No. 11, 2009, pp. 2217-2221. doi:10.1016/j.mee.2009.03.036
[7] W. M. Yim and R. J. Paff, “Thermal Expansion of AlN, Sapphire, and Silicon,” Journal of Applied Physics, Vol. 45, No. 3, 1974, pp. 1456-1457. doi:10.1063/1.1663432
[8] S. P. Dodd, G. A. Saunders, M. Cankurtaran and B. James, “Ultrasonic Study of the Elastic and Nonlinear Acoustic Properties of Ceramic Aluminum Nitride,” Journal of Materials Science, Vol. 36, No. 3, 2001, pp. 723-729. doi:10.1023/A:1004897126648
[9] I. Yonenaga, “Thermo-Mechanical Stability of WideBandgap Semiconductors: High Temperature Hardness of SiC, AlN, GaN, ZnO and ZnSe,” Physica B: Condensed Matter, Vol. 308-310, 2001, pp. 1150-1152. doi:10.1016/S0921-4526(01)00922-X
[10] A. F. Belyanin, L. L. Bouilov, V. V. Zhirnov, A. I. Kame- nev, K. A. Kovalskij and B. V. Spitsyn, “Applications of Aluminum Nitride Films for Electronic Devices,” Diamond and Related Materials, Vol. 8, No. 2-5, 1999, pp. 369-372. doi:10.1016/S0925-9635(98)00412-9
[11] M. B. Assouar, O. Elmazria, P. Kirsch, P. Alnot, V. Mortet and C. Tiusan, “High-Frequency Surface Acoustic Wave Devices Based on AlN/Diamond Layered Structure Realized Using E-Beam Lithography,” Journal of Applied Physics, Vol. 101, 2007, Article ID: 114507.
[12] J. Olivares, E. Iborra, M. Clement, L. Vergara, J. Sangrador and A. Sanz-Hervas, “Piezoelectric Actuation of Microbridges Using AlN,” Sensors and Actuators A, Vol. 123-124, 2005, pp. 590-595. doi:10.1016/j.sna.2005.03.066
[13] F. A. Ponce and D. P. Bour, “Nitride-Based Semiconductors for Blue and Green Light-Emitting Devices,” Nature, Vol. 386, 1997, pp. 351-359. doi:10.1038/386351a0
[14] X. Ni, L. Zhu, Z. Ye, Z. Zhao, H. Tang, W. Hong and B. Zhao, “Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer,” Surface & Coatings Technology, Vol. 198, No. 1-3, 2005, pp. 350-353. doi:10.1016/j.surfcoat.2004.10.073
[15] V. Venkatachalapathy, A. Galeckas, I.-H. Lee and A. Y. Kuznetsov, “Engineering of Nearly Strain Free ZnO Films on Si(111) by Tuning AlN Buffer Thickness,” Physica B: Condensed Matter, Vol. 407, 2012, pp. 1476-1480. doi:10.1016/j.physb.2011.09.065
[16] S. Raghavan and J. M. Redwing, “In Situ Stress Measurements during the MOCVD Growth of AlN Buffer Layers on (111) Si Substrates,” Journal of Crystal Growth, Vol. 261, No. 2-3, 2004, pp. 294-300. doi:10.1016/j.jcrysgro.2003.11.020
[17] N. Onojima, J. Suda and H. Matsunami, “Lattice Relaxation Process of AlN Growth on Atomically Flat 6H-SiC Substrate in Molecular Beam Epitaxy,” Journal of Crystal Growth, Vol. 237-239, 2002, pp. 1012-1016. doi:10.1016/S0022-0248(01)02118-2
[18] S.-H. Lee, K. H. Yoon, D.-S. Cheong and J.-K. Lee, “Relationship between Re-sidual Stress and Structural Properties of AlN Films Deposited by r.f. Reacrive Sputtering,” Thin Solid Films, Vol. 435, No. 1-2, 2003, pp. 193-198. doi:10.1016/S0040-6090(03)00353-5
[19] J. Keckes, S. Six, W. Tesch, R. Resel and B. Rauschenbach, “Evaluation of Thermal and Growth Stresses in Heteroepitaxial AlN Thin Films Formed on (0001) Sapphire by Pulsed Laser Ablation,” Journal of Crystal Growth, Vol. 240, No. 1-2, 2002, pp. 80-86. doi:10.1016/S0022-0248(02)00877-1
[20] N. Matsunami, S. Venkatachalam, M. Tazawa, H. Kakiuchida and M. Sataka, “Ion Beam Characterization of rfSputter Deposited AlN Films on Si(111),” Nuclear Instruments Methods B, Vol. 266, No. 8, 2008, pp. 15221526. doi:10.1016/j.nimb.2007.12.086
[21] N. Matsunami, T. Shimura, M. Tazawa, T. Kusumori, H. Kakiuchida, M. Ikeyama, Y. Chimi and M. Sataka, “Modifications of AlN Thin Films by Ions,” Nuclear Instruments Methods B, Vol. 257, No. 1-2, 2007, pp. 433-437. doi:10.1016/j.nimb.2007.01.043
[22] J. F. Ziegler, J. P. Biersack and U. Littmark, “The Stopping and Range of Ions in Solids,” Pergamon Press, New York, 1985.
[23] W. Martienssen and H. Warlimont, “Handbook of Condensed Matter and Materials Data,” Springer, Berlin, 2005. doi:10.1007/3-540-30437-1
[24] J. X. Zhang, H. Cheng, Y. Z. Chen, A. Uddin, S. Yuan, S. J. Geng and S. Zhang, “Growth of AlN Films on Si(100) and Si(111) Substrates by Reactive Magnetron Sputtering,” Surface Coating & Technology, Vol. 198, No. 1-3, 2005, pp. 68-73. doi:10.1016/j.surfcoat.2004.10.075
[25] N. Matsunami, M. Sataka, S. Okayasu and M. Tazawa, “Electronic Sputtering of Nitrides by High-Energy Ions,” Nuclear Instruments Methods B, Vol. 256, No. 1, 2007, pp. 333-336. doi:10.1016/j.nimb.2006.12.022

comments powered by Disqus

Copyright © 2020 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.