R. Rosenbaum, A. Heines, A. Palevski, M. Karpovski, A. Gladkikh, M. Pilosof, A. J. Daneshvar, M. R Graham, T. Wright, J. T. Nicholls, C. J. Adkins, M. Witcomb, V. Prozesky, W. Przybylowicz and R. Pretorius, “Metallic Trans- port Properties of Amorphous Nickel Silicon Films,” Journal of Physics: Condensed Matter, Vol. 9, No. 25, 1997, pp. 5395-5411. doi:10.1088/0953-8984/9/25/008

has been cited by the following article:

• TITLE: Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si1-yNiy:H at Very Low Temperature with Magnetic Field

  AUTHORS: Abdelfattah Narjis, Abdelhamid El kaaouachi, Jamal Hemine, Abdelghani Sybous, Lhoussine Limouny, Said Dlimi, Rachid Abdia, Gerard Buskipski

  KEYWORDS: Amorphous Silicon-Nickel Alloys a-Si1-yNiy:H; Variable Range Hopping Conductivity; Metal Insulator Transition; Positive Magnetoresistance

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.6, June 21, 2012

  ABSTRACT: We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.