Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si1-yNiy:H at Very Low Temperature with Magnetic Field

Abstract

We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.

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A. Narjis, A. kaaouachi, J. Hemine, A. Sybous, L. Limouny, S. Dlimi, R. Abdia and G. Buskipski, "Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si1-yNiy:H at Very Low Temperature with Magnetic Field," Journal of Modern Physics, Vol. 3 No. 6, 2012, pp. 447-450. doi: 10.4236/jmp.2012.36061.

Conflicts of Interest

The authors declare no conflicts of interest.

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