Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors


In this letter we propose analytical evaluation method for the electron density and the energy density in multi-layered high electron mobility transistors (HEMTs). The algorithm is used to simulate the variation of the electron density and the energy density against temperature of hetero-junction AlGaN/GaN. The proposed procedure guaranties the reliable application of the contribution of multi-layered HEMTs structure. In conclusion, the obtained results are estimated and discussed.

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Saygi, S. (2014) Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors. Open Journal of Applied Sciences, 4, 137-141. doi: 10.4236/ojapps.2014.43014.

Conflicts of Interest

The authors declare no conflicts of interest.


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