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Simin, G., Hu, X., Ilinskaya, N., Kumar, A., Koudymov, A., Zhang, J., Khan, M.A., Gaska, R. and Shur, M.S. (2000) 7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates. Electronics Letters, 36, 24.
http://dx.doi.org/10.1049/el:20001401
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