TITLE:
Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors
AUTHORS:
Salih Saygi
KEYWORDS:
HEMT; Semiconductors; Electron Density; Energy Density; Binomial Coefficient
JOURNAL NAME:
Open Journal of Applied Sciences,
Vol.4 No.3,
March
11,
2014
ABSTRACT: In this letter we propose analytical evaluation method for the electron density and the energy density in multi-layered high electron mobility transistors (HEMTs). The algorithm is used to simulate the variation of the electron density and the energy density against temperature of hetero-junction AlGaN/GaN. The proposed procedure guaranties the reliable application of the contribution of multi-layered HEMTs structure. In conclusion, the obtained results are estimated and discussed.