H. Y. Xu, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao and R. Mu, “Room-Temperature Ferromagnetism in (Mn, N)Codoped ZnO Thin Films Prepared by Reactive Magnetron Cosputtering,” Applied Physics Letters, Vol. 88, No. 24, 2006, Article ID: 242502. doi:10.1063/1.2213929

has been cited by the following article:

• TITLE: XANES and XPS Study on Microstructure of Mn-Doped ZnO Films

  AUTHORS: B. Zhang, M. Li, J. Z. Wang, L. Q. Shi, H. S. Cheng

  KEYWORDS: ZnO-Based DMS; Mn Substitution; XANES; XPS

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.5, May 21, 2013

  ABSTRACT: Microstructure of ZnO:Mn films with various Mn concentration was investigated with XANES and XPS. The experimental results revealed a substitution of Mn in ZnO and also excluded the existence of Mn oxides or metallic manganese clusters. The substitutional Mn presented a divalent state and all the ZnO:Mn films were n-type. Room temperature ferromagnetism monotonously decreases with the decrease of the electron carrier concentration. The observed ferrmagnetism should come from the carrier-mediated exchange.