XANES and XPS Study on Microstructure of Mn-Doped ZnO Films

B. Zhang, M. Li, J. Z. Wang, L. Q. Shi, H. S. Cheng

Applied Ion Beam Physics Laboratory (Key Laboratory of the Ministry of Education), Institute of Modern Physics, Fudan University, Shanghai, China; Department of Nuclear Science and Technology, Fudan University, Shanghai, China.

DOI: 10.4236/msa.2013.45039                

Abstract

Microstructure of ZnO:Mn films with various Mn concentration was investigated with XANES and XPS. The experimental results revealed a substitution of Mn in ZnO and also excluded the existence of Mn oxides or metallic manganese clusters. The substitutional Mn presented a divalent state and all the ZnO:Mn films were n-type. Room temperature ferromagnetism monotonously decreases with the decrease of the electron carrier concentration. The observed ferrmagnetism should come from the carrier-mediated exchange.

Keywords

ZnO-Based DMS; Mn Substitution; XANES; XPS

Conflicts of Interest

The authors declare no conflicts of interest.

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