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https://doi.org/10.1016/0022-3093(95)00707-5

has been cited by the following article:

• TITLE: A.C. Recombination Velocity as Applied to Determine n+/p/p+ Silicon Solar Cell Base Optimum Thickness

  AUTHORS: Amadou Mar Ndiaye, Sega Gueye, Ousmane Sow, Gora Diop, Amadou Mamour Ba, Mamadou Lamine Ba, Ibrahima Diatta, Lemrabott Habiboullah, Gregoire Sissoko

  KEYWORDS: Silicon Solar Cell, Modulation Frequency, Recombination Velocity, Base Thickness, Wavelength

  JOURNAL NAME: Energy and Power Engineering, Vol.12 No.10, October 22, 2020

  ABSTRACT: This work deals with determining the optimum thickness of the base of an n+/p/p+ silicon solar cell under monochromatic illumination in frequency modulation. The continuity equation for the density of minority carriers generated in the base, by a monochromatic wavelength illumination (λ), with boundary conditions that impose recombination velocities (Sf) and (Sb) respectively at the junction and back surface, is resolved. The ac photocurrent is deduced and studied according to the recombination velocity at the junction, to extract the mathematical expressions of recombination velocity (Sb). By the graphic technique of comparing the two expressions obtained, depending on the thickness (H) of the base, for each frequency, the optimum thickness (Hopt) is obtained. It is then modeled according to the frequency, at the long wavelengths of the incident light. Thus, Hopt decreases due to the low relaxation time of minority carriers, when the frequency of modulation of incident light increases.