Rabbant, K.S. and Lamb, D.R. (1981) A Quick Method for the Determination of Bulk Generation Lifetime in Semiconductors from Pulsed MOS Capacitance Measurements. Solid-State Electronics, 24, 661-664.
https://doi.org/10.1016/0038-1101(81)90196-9

has been cited by the following article:

• TITLE: Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

  AUTHORS: Meimouna Mint Sidi Dede, Mamadou Lamine Ba, Mamour Amadou Ba, Mor Ndiaye, Sega Gueye, El Hadj Sow, Ibrahima Diatta, Masse Samba Diop, Mamadou Wade, Gregoire Sissoko

  KEYWORDS: Silicon Solar Cell, Absorption Coefficient, Back Surface Recombination, Optimum Thickness

  JOURNAL NAME: Energy and Power Engineering, Vol.12 No.7, July 31, 2020

  ABSTRACT: The monochromatic absorption coefficient of silicon, inducing the light penetration depth into the base of the solar cell, is used to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in the excess minority carrier continuity equation. The solution of this equation gives the photocurrent according to absorption and electronic parameters. Then from the obtained short circuit photocurrent expression, excess minority carrier back surface recombination velocity is determined, function of the monochromatic absorption coefficient at a given wavelength. This latter plotted versus base thickness yields the optimum thickness of an n+-p-p+ solar cell, for each wavelength, which is in the range close to the energy band gap of the silicon material. This study provides a tool for improvement solar cell manufacture processes, through the mathematical relationship obtained from the thickness limit according to the absorption coefficient that allows base width optimization.