Takahashi, T., Otani, M., Muroi M., Irikura, K., Matsuo, M., Yamada A., Habuka, H., Ishida, Y., Ikeda, S. and Hara, S. (2020) Quartz Crystal Microbalance for Real-Time Monitoring Chlorosilane Gas Transport in Slim Vertical Cold Wall Chemical Vapor Deposition Reactor. Materials Science in Semiconductor Processing, 106, Article ID: 104759.
https://doi.org/10.1016/j.mssp.2019.104759

has been cited by the following article:

• TITLE: Quartz Crystal Microbalances for Evaluating Gas Motion Differences between Dichlorosilane and Trichlorosilane in Ambient Hydrogen in a Slim Vertical Cold Wall Chemical Vapor Deposition Reactor

  AUTHORS: Mana Otani, Toshinori Takahashi, Hitoshi Habuka, Yuuki Ishida, Shin-Ichi Ikeda, Shiro Hara

  KEYWORDS: Minimal Fab, Chemical Vapor Deposition Reactor, Quartz Crystal Microbalance, Silicon Epitaxial Growth, Trichlorosilane, Dichlorosilane

  JOURNAL NAME: Advances in Chemical Engineering and Science, Vol.10 No.3, June 30, 2020

  ABSTRACT: A dichlorosilane gas and a trichlorosilane gas in ambient hydrogen were evaluated to show their different gas flow motions in a slim vertical cold wall chemical vapor deposition reactor for the Minimal Fab system. This evaluation was performed for improving and controlling the film qualities and the productivities, using two quartz crystal microbalances (QCM) installed at the inlet and exhaust of the chamber by taking into account that the QCM frequency corresponds to the real time changes in the gas properties. Typically, the time period approaching from the inlet to the exhaust was shorter for the trichlorosilane gas than that for the dichlorosilane gas. The trichlorosilane gas was shown to move like plug flow, while the dichlorosilane gas seemed to be well mixed in the entire chamber.