Dieme, N., Zoungrana, M., Mbodji, S., Diallo, H.L., Ndiaye, M., Barro, F.I. and Sissoko, G. (2014) Research Journal of Applied Sciences, Engineering and Technology, 7, 2559-2562.
https://doi.org/10.19026/rjaset.7.567

has been cited by the following article:

• TITLE: AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature

  AUTHORS: Youssou Traore, Ndeye Thiam, Moustapha Thiame, Amary Thiam, Mamadou Lamine Ba, Marcel Sitor Diouf, Ibrahima Diatta, Oulymata Mballo, El Hadji Sow, Mamadou Wade, Grégoire Sissoko

  KEYWORDS: Vertical Multi-Junctions, Solar Cell, AC Back Surface Recombination Velocity, Temperature, Bode and Nyquist Diagrams

  JOURNAL NAME: Journal of Modern Physics, Vol.10 No.10, September 23, 2019

  ABSTRACT: The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.