Hofmann, A. and Pettenkofer, C. (2012) The CuInSe_2-CuIn₃Se₅ Defect Compound Interface: Electronic Structure and Band Alignment. Applied Physics Letters, 101, Article ID: 062108.
http://dx.doi.org/10.1063/1.4739790

has been cited by the following article:

• TITLE: Fabrication, Characterization and Optical Properties of CuIn3Se5 Bulk Compounds

  AUTHORS: Dayane Habib, Ouloum Aoudé, Slyman Karishy, Georges El Haj Moussa

  KEYWORDS: Chalcopyrite, Photovoltaic, Photoluminescence, Optical Response, X-Ray Diffraction

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.5 No.3, August 19, 2015

  ABSTRACT: The present work prepared the CuIn3Se5 ingots by using a horizontal Bridgman method and investigated the Energy Dispersive Spectrometry (EDS) and X-Ray Diffraction (XRD) to calculate the compositions of the ingots. Photoluminescence was used to check their optical properties. It was found that CuIn3Se5 had either a Stanite structure, an Ordered Defect Chalcopyrite (ODC) structure, or an Ordered Vacancy Chalcopyrite (OVC) structure. The gap energy obtained by Photoluminescence (PL) for the different samples is 1.23 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type.