R. Chen and C. Persson, “Band-Edge Density-of-States and Carrier Concentrations in Intrinsic and P-Type CuIn1?xGaxSe2,” Journal of Applied Physics, Vol. 112, No. 10, 2012, pp. 103708-103718. http://dx.doi.org/10.1063/1.4767120

has been cited by the following article:

• TITLE: Electronic Modeling and Optical Properties of CuIn0.5Ga0.5Se2 Thin Film Solar Cell

  AUTHORS: Rongzhen Chen, Clas Persson

  KEYWORDS: Thin Film; CuIn0.5Ga0.5Se2; Band Structure; Dielectric Function; Dielectric Constant; Absorption Coefficient; Complex Refractive Index; Reflectivity; Spin-Orbit Coupling

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.2 No.1, January 9, 2014

  ABSTRACT: In this work, the band structure and optical-related properties of CuIn0.5Ga0.5Se2 thin film are presented. The calculation is performed by the full-potential linearized augmented plane wave (FPLAPW) method. The spin-orbit coupling is considered. The result for the dielectric function is in good agreement with earlier experimental measurements and simulations. Based on the complex dielectric function, the dielectric constant, the absorption coefficient, the complex refractive index and the reflectivity at normal incidence are explored. We found that they are comparable with the earlier results.