Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

DOI: 10.4236/jmp.2011.29124   PDF   HTML     5,364 Downloads   9,367 Views   Citations


Gap states in amorphous hydrogenated silicon (a-Si:H) doped and microcrystalline silicon doped n and p were examined by analysis of subgap absorption spectra obtained by the Constant Photocurrent Method (CPM) and the Photothermal Deflection Spectroscopy (PDS). Assuming a Gaussian distribution of defect states in the gap, broad distribution of states was found in a-Si:H and doped a-Si:H. A dependence of the defect concentration on Fermi energy was detected and analysed by thermodynamic model of defect formation in a-Si:H.

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L. F., B. Abdelkader, S. D., B. Y., C. L. and A. A., "Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon," Journal of Modern Physics, Vol. 2 No. 9, 2011, pp. 1030-1036. doi: 10.4236/jmp.2011.29124.

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The authors declare no conflicts of interest.


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