On Radioactivity–Exposed Nanophotodetector Optoreliability ()
Abstract
The optoelectronic reliability of representative radioactivity-exposed nanophotodetectors and the degree of functionally tolerable radioactivity-induced responsivity de-emphasis, against increasing cumulative radioactivity-dose, is notionally considered and modelled, with a view towards experimental findings concerning p-i-n photosensors being exposed to regulated successive (α, β)-particle bombardments.
Share and Cite:
E. Anagnostakis, "On Radioactivity–Exposed Nanophotodetector Optoreliability,"
Journal of Modern Physics, Vol. 2 No. 7, 2011, pp. 766-770. doi:
10.4236/jmp.2011.27089.
Conflicts of Interest
The authors declare no conflicts of interest.
References
|
[1]
|
E. A. Anagnostakis, “Photoconductive Response of GaAs Epitaxial Layers,” Applied Physics A, Vol. 54, No. 2, 1992, pp. 68-71. doi:10.1007/BF00348133
|
|
[2]
|
E. A. Anagnostakis, “Determination of Persistent Photoconductivity within Semiconductor Epitaxial Layers by Photoconductive Gain,” Physical Review B, Vol. 46, No. 3, 1992, pp. 7593-7595. doi:10.1103/PhysRevB.46.7593
|
|
[3]
|
E. A. Anagnostakis,“Semiconductor-Nanoheterointerface Eigenstate Photonic Modification,” Journal of Non-Crystalline Solids, Vol. 354, No. 1, 2008, pp. 4233-4237.
doi:10.1016/j.jnoncrysol.2008.06.029
|
|
[4]
|
D. Wood, “Optoelectronic Semiconductor Devices,” Prentice Hall International Ltd, London, 1994, pp. 247-162.
|
|
[5]
|
S. M. Sze, “Physics of Semiconductor Devices,” Wiley Interscience Ltd, New York, 1969, pp. 130-142.
|
|
[6]
|
E. A. Anagnostakis, “Photoconductive Gain of Semiconductor Epitaxial Layers,” Physical Status Solidi A, Vol. 127, No. 1, 1991, pp. 153-158.
doi:10.1002/pssa.2211270116
|
|
[7]
|
E. A. Anagnostakis, “Lateral Photovoltage as a Probe of MODFET Channel Disorder,” Physica Status Solidi B, Vol. 172, No, 6, 1992, pp. K61-K63.
doi:10.1002/pssb.2221720228
|