Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes

DOI: 10.4236/detection.2014.22003   PDF   HTML     3,423 Downloads   6,299 Views   Citations


Avalanche photodiodes are widely utilized in research, military and commercial applications which make them attractive for further development. In this paper the results of numerical simulations of uncooled InGaAs/InAlAs/InP based photodiodes are presented. The devices were optimized for 1.55 μm wavelength detection. For device modeling the APSYS Crosslight software was used. Simulated structure consists of separate absorption, charge and multiplication layers with undepleted absorption region and thin charge layer. Based on numerical calculations, the device characteristics like band diagram, dark current, photo current, gain, breakdown voltage and gain bandwidth product were evaluated. The simulation results highlight importance of Zener effect in avalanche photodiode operation.

Share and Cite:

Żak, D. , Jureńczyk, J. and Kaniewski, J. (2014) Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes. Detection, 2, 10-15. doi: 10.4236/detection.2014.22003.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Campbell, C.J. (2007) Recent Advances in Telecommunications Avalanche Photodiodes. IEEE Journal of Lightwave Technology, 25, 109-121. http://dx.doi.org/10.1109/JLT.2006.888481
[2] McIntyre, R.J. (1966) Multiplication Noise in Uniform Avalanche Diodes. IEEE Transactions on Electron Devices, ED-13,164-168. http://dx.doi.org/10.1109/T-ED.1966.15651
[3] Yuan, P., Hansig, C.C., Anselm, A., Lenox, C.C., Nie, H., Holmels, L.A., Streetman, B.G. and Campbell, C.J. (2000) Impact Ionization Characteristics of III-V Semiconductors for a Wide Range of Multiplication Region Thickness. IEEE Journal of Quantum Electronics, 36, 198-204.
[4] Crosslight Software Inc. http://www.crosslight.com/products/apsys.shtml
[5] Haralson, J.N., Parks, J.W., Brennan, K.F., Clark, W. and Tarof, L.E. (1997) Numerical Simulation of Avalanche Breakdown within InP-InGaAs SAGCM Standoff Avalanche Photodiodes. IEEE Journal of Lightwave Technology, 15, 2137-2140. http://dx.doi.org/10.1109/50.641534
[6] Xiao, Y.G., Li, Z.Q. and Simon Li, Z.M. (2007) Dynamic Drift-Diffusion Simulation of InP/InGaAs SAGCM APD. Physica Ststus Solidi (c), 4, 1641-1645. http://dx.doi.org/10.1002/pssc.200674253
[7] Li, N., Sidhu, R., Li, X., Feng, M., Zheng, X., Shuling, W., Karve, G., Demiguel, S., Holmes, A.L. and Campbell, C.J. (2007) InGaAs/InAlAs Avalanche Photodiode with Undepleted Absorber. Applied Physics Letters, 82, 2175-2177. http://dx.doi.org/10.1063/1.1559437

comments powered by Disqus

Copyright © 2020 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.