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Yuan, P., Hansig, C.C., Anselm, A., Lenox, C.C., Nie, H., Holmels, L.A., Streetman, B.G. and Campbell, C.J. (2000) Impact Ionization Characteristics of III-V Semiconductors for a Wide Range of Multiplication Region Thickness. IEEE Journal of Quantum Electronics, 36, 198-204.
http://dx.doi.org/10.1109/3.823466

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