Share This Article:

Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré

Full-Text HTML XML Download Download as PDF (Size:2449KB) PP. 8-15
DOI: 10.4236/msce.2018.67002    215 Downloads   393 Views

ABSTRACT

A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.

Cite this paper

Yamanaka, J. , Shirakura, M. , Yamamoto, C. , Sato, K. , Yamada, T. , Hara, K. , Arimoto, K. , Nakagawa, K. , Ishizuka, A. and Ishizuka, K. (2018) Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré. Journal of Materials Science and Chemical Engineering, 6, 8-15. doi: 10.4236/msce.2018.67002.

Copyright © 2019 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.