Author(s)

Kenta Miura^*, Takumi Osawa, Yuya Yokota, Zobaer Hossain, Osamu Hanaizumi

Graduate School of Science and Technology, Gunma University, Kiryu, Japan.

We prepared CuO-Ta₂O₅ composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta₂O₅ sample by cutting it using a diamond- wire saw, and the specimens were subsequently annealed at 600°C - 900°C. The X-ray diffraction and photoluminescence (PL) of the annealed specimens were evaluated. The CuO-Ta₂O₅ film annealed at 600°C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength of 450 nm, due to the existence of Cu²⁺, was observed from the film. In contrast, the CuO-Ta₂O₅ films annealed at 700°C, 800°C, and 900°C seemed to be tetragonal CuTa₂O₆ phases. We expect that good-quality CuTa₂O₆ films can be obtained using our very simple co-sputtering method and subsequent annealing above 900°C. Such CuTa₂O₆ films can be used in chemisorptions conductometric gas sensors.

Ta₂O₅, CuO, Co-Sputtering, X-Ray Diffraction, Photoluminescence

Miura, K. , Osawa, T. , Yokota, Y. , Hossain, Z. and Hanaizumi, O. (2015) Preparation of CuO-Ta₂O₅ Composites Using a Simple Co-Sputtering Method. Journal of Materials Science and Chemical Engineering, 3, 47-51. doi: 10.4236/msce.2015.39006.