A. R. Chowdhury, I. Dutta, K. Mukherjee and D. Kumbhakar, “FDTD Simulation of Two Photon Absorption in Silicon Waveguide and Realization of All Optical Logic Gates,” Proceedings of Frontiers in Optics and Photonics, XXXVI OSI Symposium, Delhi, 3-5 December 2011, p. 245.

has been cited by the following article:

• TITLE: FDTD Simulation of Three Photon Absorption and Realization of NAND Gate with GaAs Wire Waveguide

  AUTHORS: Ivy Dutta, Anirban Roy Chowdhury, Dharmadas Kumbhakar

  KEYWORDS: Three Photon Absorption; Fifth Order Nonlinearity; FDTD; Full Vector Finite Difference Method; Pump Beam and Probe Beam

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.5, August 26, 2013

  ABSTRACT: GaAs has high three photon absorption (3PA) co-efficient at mid-infrared wavelength like2.2mm and waveguides can be formed with this material like silicon nano-wires. It is shown that three-photon-absorption in GaAs wire waveguide can be utilized to form NAND gate. Three-photon-absorption is incorporated in one-dimensional Finite Difference Time Domain (FDTD) equations. The evolution of a probe pulse under the influence of a pump pulse through crossabsorption in a waveguide is investigated using FDTD simulation, where the dominant process is nonlinear three-photon-absorption. Output probe power dependence on input pump power shows that GaAs waveguide NAND gate has higher extinction ratio in comparison to NAND gate using two-photon-absorption in silicon waveguide.