FDTD Simulation of Three Photon Absorption and Realization of NAND Gate with GaAs Wire Waveguide

Ivy Dutta, Anirban Roy Chowdhury, Dharmadas Kumbhakar

Department of Electronics & Communication Engineering, Banwarilal Bhalotia College, Asansol, India.
Department of Physics, Kanksa Academy of Technology & Management, Burdwan, India.

DOI: 10.4236/opj.2013.35048                

Abstract

GaAs has high three photon absorption (3PA) co-efficient at mid-infrared wavelength like2.2mm and waveguides can be formed with this material like silicon nano-wires. It is shown that three-photon-absorption in GaAs wire waveguide can be utilized to form NAND gate. Three-photon-absorption is incorporated in one-dimensional Finite Difference Time Domain (FDTD) equations. The evolution of a probe pulse under the influence of a pump pulse through crossabsorption in a waveguide is investigated using FDTD simulation, where the dominant process is nonlinear three-photon-absorption. Output probe power dependence on input pump power shows that GaAs waveguide NAND gate has higher extinction ratio in comparison to NAND gate using two-photon-absorption in silicon waveguide.

Keywords

Three Photon Absorption; Fifth Order Nonlinearity; FDTD; Full Vector Finite Difference Method; Pump Beam and Probe Beam

Conflicts of Interest

The authors declare no conflicts of interest.

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