Y. Omura, S. Nakashima, K. Izumi and T. Ishii, “0.1-μm Gate, Ultrathin-Film CMOS Devices Using SIMOX Substrate with 80-nm-Thick Buried Oxide Layer,” IEEE Transactions on Electron Devices, Vol. 40, No. 5, 1993, pp. 1019-1022. doi:10.1109/16.210214

has been cited by the following article:

• TITLE: Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

  AUTHORS: Yasuhisa Omura, Yukio Iida

  KEYWORDS: RF-ID; Schenkel Circuit; SOI-MOSFET; Quasi-Diode; Low-Power

  JOURNAL NAME: Circuits and Systems, Vol.4 No.2, April 17, 2013

  ABSTRACT: The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.