Article citationsMore>>

Yeritsyan, H.N., Sahakyan, A.A., Grigoryan, N.E., Harutyunyan, V., Arzumanyan, V.K., Tsakanov, V.M., Grigoryan, B.A., Amatuni, G.A. and Rodes, C.J. (2020) Introduction Rates of Radiation Defects in Electron Irradiated Semiconductor Crystals of n-Si and n-GaP. Radiation Physics and Chemistry, 176, Article ID: 109056.
https://doi.org/10.1016/j.radphyschem.2020.109056

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2024 Scientific Research Publishing Inc. All Rights Reserved.
Top