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The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal

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DOI: 10.4236/jmp.2015.614211    3,545 Downloads   3,842 Views   Citations

ABSTRACT

Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiOn (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Yeritsyan, H. , Sahakyan, A. , Grigoryan, N. , Hakhverdyan, E. , Harutyunyan, V. , Hovhannisyan, A. , Sahakyan, V. , Khachatryan, A. , Grigoryan, B. , Hakobyan, L. , Amatuni, G. , Vardanyan, A. and Tsakanov, V. (2015) The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal. Journal of Modern Physics, 6, 2050-2057. doi: 10.4236/jmp.2015.614211.

References

[1] Muller, S.H., Sprenger, M., et al. (1978) Solid State Communications, 25, 987.
http://dx.doi.org/10.1016/0038-1098(78)90889-X
[2] Trambetta, J.M., Watkins, G.D., et al. (1997) Journal of Applied Physics, 81, 1109.
http://dx.doi.org/10.1063/1.363854
[3] Kaiser, W. (1957) Physical Review, 105, 1751.
http://dx.doi.org/10.1103/PhysRev.105.1751
[4] Kaiser, W., Frisch, H.L. and Reiss, H. (1958) Physical Review, 112, 1546.
http://dx.doi.org/10.1103/PhysRev.112.1546
[5] Mordkovich, V.N. (1964) Fizika Tverdogo Tela, 6, 847.
[6] Ramdas, A.K. and Rao, M.G. (1966) Physical Review, 142, 451.
http://dx.doi.org/10.1103/PhysRev.142.451
[7] Corbett, J.W., Watkins, G.D. and McDonald, R.S. (1964) Physical Review, 135, A1381.
http://dx.doi.org/10.1103/PhysRev.135.A1381
[8] Pajot, B. (1969) Solid State Electronics, 12, 923.
http://dx.doi.org/10.1016/0038-1101(69)90051-3
[9] Watkins, G.D., Corbett, J.W. and Walker, R.M. (1959) Journal of Applied Physics, 30, 1198.
http://dx.doi.org/10.1063/1.1735293
[10] Watkins, G.D. (1965) Radiation Damage in Semiconductors. Dunod, Paris, 97.
[11] Sokolov, S.N. and Silin, I.N. (1961) Preprint JINR (Dubna), D810.
[12] Arai, T. (1962) Journal of the Physical Society of Japan, 17, 246.
http://dx.doi.org/10.1143/JPSJ.17.246
[13] Bean, A.R., Newman, R.C. and Smith, R.C. (1970) Journal of Physics and Chemistry of Solids, 31, 739.
http://dx.doi.org/10.1016/0022-3697(70)90207-6
[14] Yeritsyan, H.N., Sahakyan, A.A., Grigoryan, N.E., et al. (2015) Journal of Modern Physics, 6, 1270.
http://dx.doi.org/10.4236/jmp.2015.69132
[15] Emtsev, V.V., Ivanov, A.M., et al. (2012) Fizika i Technika Poluprovodnikov, 46, 473.

  
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