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The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal

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DOI: 10.4236/jmp.2015.614211    3,545 Downloads   3,842 Views   Citations


Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiOn (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.

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The authors declare no conflicts of interest.

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Yeritsyan, H. , Sahakyan, A. , Grigoryan, N. , Hakhverdyan, E. , Harutyunyan, V. , Hovhannisyan, A. , Sahakyan, V. , Khachatryan, A. , Grigoryan, B. , Hakobyan, L. , Amatuni, G. , Vardanyan, A. and Tsakanov, V. (2015) The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal. Journal of Modern Physics, 6, 2050-2057. doi: 10.4236/jmp.2015.614211.


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