Author(s)

El Hadji Ndiaye, Gokhan Sahin, Moustapha Dieng, Amary Thiam, Hawa Ly Diallo, Mor Ndiaye, Grégoire Sissoko^*

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.

In this study, a method for determining the intrinsic recombination velocity at the junction of a silicon solar cell is presented. The expression of intrinsic recombination velocity at the junction was established under irradiation in frequency modulation. Based on this expression, an electrical model of the intrinsic recombination velocity at the junction is presented.

Silicon Solar Cell, Frequency Modulation, Intrinsic Recombination Velocity at the Junction, Irradiation Energy

Ndiaye, E. , Sahin, G. , Dieng, M. , Thiam, A. , Diallo, H. , Ndiaye, M. and Sissoko, G. (2015) Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation. Journal of Applied Mathematics and Physics, 3, 1522-1535. doi: 10.4236/jamp.2015.311177.