"Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation"
written by El Hadji Ndiaye, Gokhan Sahin, Moustapha Dieng, Amary Thiam, Hawa Ly Diallo, Mor Ndiaye, Grégoire Sissoko,
published by Journal of Applied Mathematics and Physics, Vol.3 No.11, 2015
has been cited by the following article(s):
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[2] Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State
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[3] Effect of Temperature on the Capacitance of a Silicon Solar Cell in Static Regime
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[4] Effect of temperature of a vertical parallel silicon solar cell under photo-thermal conditions
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[5] IMPEDANCE SPECTROSCOPY OF SILICON SOLAR CELLS
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[6] Minority Carrier Diffusion Coefficient D*(B, T): Study in Temperature on a Silicon Solar Cell under Magnetic Field
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[7] Performance of conversion efficiency of a crystalline silicon solar cell with base doping density
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[8] Results in Physics
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[9] Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain
Results in Physics, 2016
[10] Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light
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[11] Effect of incidence angle on the electrical parameters of vertical parallel junction silicon solar cell under frequency domain
Moscow University Physics Bulletin, 2016
[12] Effect of junction recombination velocity of electrical parameters of a vertical parallel silicon solar cell under frequency modulation
Applied Physics A, 2016
[13] Geniş Sekturumlu Aydınlatma altında İki Yüzeyli Silikon Güneş Pilinin Difüzyon Kapasitansı ve Aşırı Azınlık Taşıyıcı Yoğunluğu
Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2016