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H.-Y. Yu, M. Ishibashi, J. -H. Park, M. Kobayashi, and K. C. Saraswat, "p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Geon Si,” IEEE Electron Device Letters, Vol. 30, No. 6, 2009, pp. 675-677. doi:10.1109/LED.2009.2019847

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