A. I. Nikiforov, V. A. Cherepanov, O. P. Pchelyakov, A. V. Dvurechenskii and A. I. Yakimov, “In situ RHEED Control of Self-Organized Ge Quantum Dots,” Thin Solid Films, Vol. 380, No. 1-2, 2000, pp. 158-163. doi:10.1016/S0040-6090(00)01493-0

has been cited by the following article:

• TITLE: Molecular Dynamics Study on Mechanical Properties in the Structure of Self-Assembled Quantum Dot

  AUTHORS: Tatsuya Yamaguchi, Ken-ichi Saitoh

  KEYWORDS: Molecular Dynamics; Self-Assembled Quantum Dot; Germanium; Silicon; Mechanical Property

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.2 No.4, December 14, 2012

  ABSTRACT: Stress and strain in the structure of self-assembled quantum dots constructed in the Ge/Si(001) system is calculated by using molecular dynamics simulation. Pyramidal hut cluster composed of Ge crystal with {105} facets surfaces observed in the early growth stage are computationally modeled. We calculate atomic stress and strain in relaxed pyramidal structure. Atomic stress for triplet of atoms is approximately defined as an average value of pairwise (virial) quantity inside triplet, which is the product of vectors between each two atoms. Atomic strain by means of atomic strain measure (ASM) which is formulated on the Green’s definition of continuum strain. We find the stress (strain) relaxation in pyramidal structure and stress (strain) concentration in the edge of pyramidal structure. We discuss size dependency of stress and strain distribution in pyramidal structure. The relationship between hydrostatic stress and atomic volumetric strain is basically linear for all models, but for the surface of pyramidal structure and Ge-Si interface. This means that there is a reasonable correlation between atomic stress proposed in the present study and atomic strain measure, ASM.