TITLE:
Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV
AUTHORS:
Svetlana N. Svitasheva
KEYWORDS:
GaAs, Heterostructure, Optical Properties, Thin Films, Spectroscopic Ellipsometry
JOURNAL NAME:
Journal of Electromagnetic Analysis and Applications,
Vol.2 No.6,
June
30,
2010
ABSTRACT: The thickness and spectral dependence of the complex refractive index of upper layer in thin-film MBE-grown GaAs heterostructures were calculated basing on an classical oscillatory model of dielectric function from spectra measured by spectroscopic ellipsometry (nondestructive, contactless optical method) in the range of 1.5-4.75 eV.