Article citationsMore>>

J. W. Seo, et al., “A ZnO Cross-Bar Array Resistive Random access Memory Stacked with Heterostructure Diodes for Eliminating the Sneak Current Effect,” Applied Physics Letters, Vol. 98, No. 23, 2011, p. 233505-3. doi:10.1063/1.3599707

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2024 Scientific Research Publishing Inc. All Rights Reserved.
Top