TITLE:
Carrier-Induced Magnetic Solitons and Metal-Insulator Transition in Diluted Magnetic Semiconductors Ga1-xMnxAs
AUTHORS:
I. Kanazawa, S. Nakamura, R. Maeda
KEYWORDS:
Diluted Magnetic Semiconductor, Magnetic Soliton, Metal-Insulator Transition, Localization
JOURNAL NAME:
Journal of Modern Physics,
Vol.9 No.14,
December
14,
2018
ABSTRACT: We discuss hole-induced magnetic solitons and metal-insulator transition of transport properties in diluted magnetic semiconductors Ga1-xMnxAs from the standpoint of a field theoretical formulation, and analyze experimental data of transport properties, using the supersymmetry sigma formula and the effective Lagrangian of diffusion model.