Rosar, M., Leroy, B. and Schweeger, G. (2000) A New Model for the Description of Gate Voltage and Temperature Dependence of Gate Induced Drain Leakage (GIDL) in the Low Electric Field Region. IEEE Transactions on Electron Devices, 47, 154-159.
https://doi.org/10.1109/16.817581

has been cited by the following article: