Diallo, H.L., Maiga, A.S., Wereme, A. and Sissoko, G. (2008) New Approach of both Junction and Back Surface Recombination Velocities in a 3D Modelling Study of a Polycrystalline Silicon Solar Cell. The European Physical Journal Applied Physics, 42, 193-211.
http://dx.doi.org/10.1051/epjap:2008085

has been cited by the following article:

• TITLE: Modelling Study of Magnetic Field’s Effects on Solar Cell’s Transient Decay

  AUTHORS: Senghane Mbodji, Martial Zoungrana, Issa Zerbo, Biram Dieng, Gregoire Sissoko

  KEYWORDS: Solar Cell, Recombination Parameters, Magnetic Field

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.5 No.4, November 18, 2015

  ABSTRACT: Experimental setup of transient decay which occurs between two steady state operating points is recalled. The continuity equation is resolved using both the junction dynamic velocity (Sf) and back side recombination velocity (Sb). The transient excess minority carriers density appears as the sum of infinite terms. Influence of magnetic field on the transient excess minority carriers density and transient photo voltage is studied and it is demonstrated that the use of this technique is valid only when the magnetic field is lower than 0.001 T.