TITLE:
Direct Structural Evidences of Epitaxial Growth Ge1-X MnX Nanocolumn Bi-Layers on Ge(001)
AUTHORS:
Thi Giang Le
KEYWORDS:
GeMn Diluted Magnetic Semiconductors, Muti-Layers, GeMn Nanocolumns, Thin Film, Epitaxial Growth
JOURNAL NAME:
Materials Sciences and Applications,
Vol.6 No.6,
June
15,
2015
ABSTRACT: Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction
(RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology
and crystal structure of thin films. Based on the observation of changes in RHEED patterns
during nanocolumn growth, we used a real-time control approach to realize multilayer structures
that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy
(TEM) has been used to investigate the structural properties of the GeMn nanocolumns
and GeMn/Ge nanocolumns bi-layers samples.