Huang, C. and Gildenblat, S. (1990) Measurements and Modeling of the N-Channel MOSFET Inversion Layer Mobility and Device Characteristics in the Temperature Range 60-300 K. IEEE Transactions on Electronic Devices, 37, 1289-1300.
http://dx.doi.org/10.1109/16.108191

has been cited by the following article:

• TITLE: Electrical Analysis of Indium Deep Levels Effects on Kink Phenomena of Silicon NMOSFETs

  AUTHORS: Abdelaali Fargi, Neila Hizem, Adel Kalboussi, Abdelkader Souifi

  KEYWORDS: Electrical Characterization; MOSFET; Indium Deep Traps; Kink Effect; Impact Ionization

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.4 No.1, March 13, 2014

  ABSTRACT: Several methods of characterization of trap levels like I-V, C-V and transient spectroscopy (DLTS) were used to determine the accurate values of the activation energies of traps present in N+P junctions obtained after retrograde profile implantation of indium and boron on silicon. Four main traps located at Ev + 0.15 eV, Ev + 0.21 eV, Ev + 0.28 eV and Ev + 0.46 eV are reported. Shallow levels are also calculated from I-V characteristics. Concurrently, indium channel doped NMOSFETs are investigated showing the kink phenomenon. In order to discuss the relationship between the kink effect and the active indium trap level situated at 0.16 eV, the transient effects are studied by varying the integration time and the temperature. The effects of substrate polarization are also carried out showing the reduction of the kink with the bulk positive polarization.