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J. F. Scott, M. Azuma, E. Fujii, T. Otsuki, G. Kano, M. C. Scott, C. A. Paz de Araujo, L. D. McMillan and T. Roberts, “Microstructure-Induced Schottky Barrier Effects in Barium Strontium Titanate (BST) Thin Films for 16 and 64 Mbit (DRAM cells),” Proceedings of International Symposium on Integrated Ferroelectrics, New York, 1992, p. 356.

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