S. K. Nandi, S. Chakraborty, M. K. Bera and C. K. Maiti, “Structural and Optical Properties of ZnO Films Grown on Silicon and Their Applications in MOS Devices in Conjunction with ZrO2 as a Gate Dielectric,” Bulletin of Materials Science, Vol. 30, No. 3, 2007, pp. 247-254. doi:10.1007/s12034-007-0044-3

has been cited by the following article:

• TITLE: Effect of Substrates on the Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

  AUTHORS: Adel Taabouche, Abderrahmane Bouabellou, Fouad Kermiche, Faouzi Hanini, Sarah Menakh, Yacine Bouachiba, Tahar Kerdja, Chawki Benazzouz, Mohamed Bouafia, Saad Amara

  KEYWORDS: ZnO; Thin Films; PLD; Silicon; X-Ray Diffraction; Optical Transmittance; RBS

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.3 No.4, August 21, 2013

  ABSTRACT: Polycrystalline zinc oxide (ZnO) thin films have been deposited at 450°C onto glass and silicon substrates by pulsed laser deposition technique (PLD). The used source was a KrF excimer laser (248 nm, 25 ns, 5 Hz, 2 J/cm2). The effects of glass and silicon substrates on structural and optical properties of ZnO films have been investigated. X-ray diffraction patterns showed that ZnO films are polycrystalline with a hexagonal wurtzite—type structure with a strong (103) orientation and have a good crystallinity on monocrystalline Si(100) substrate. The thickness and compositional depth profile were studied by Rutherford Backscattering spectrometry (RBS). The average transmittance of ZnO films deposited on glass substrate in the visible range is 70%.