TITLE:
Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors
AUTHORS:
Bo Gan, Tingcun Wei, Wu Gao, Huiming Zeng, Yann Hu
KEYWORDS:
CdZnTe; Detector; Low Noise; Front-End; Readout; CMOS
JOURNAL NAME:
Journal of Signal and Information Processing,
Vol.4 No.2,
May
8,
2013
ABSTRACT:
In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.