C. Wei-Hsu, Y. Kuo-Yi, L. Shao-Cian, G. Jyh-Rong, N. Cuo-Yo and L. Shih-Chang, “On the Physical Properties of In2O3 Films Prepared by Atomic Layer Deposition Using Tri-methyl-Indium and Nitrous Oxide,” Proceed-ings INEC 2010-2010 3rd International Nanoelectronics Conference, Hong Kong, January 2010, pp.791-792.

has been cited by the following article:

• TITLE: A Dependence of Crystallinity of In2O3 Thin Films by a Two-Step Heat Treatment of Indium Films on the Heating Atmosphere

  AUTHORS: Yuichi Sato, Fumito Otake, Hirotoshi Hatori

  KEYWORDS: Solid Phase Epitaxy, Oxides, Sapphire, Semiconducting Materials

  JOURNAL NAME: Journal of Modern Physics, Vol.1 No.6, December 29, 2010

  ABSTRACT: A difference in crystallinity of In2O3 thin films on sapphire substrates by heat treatment of indium films was reported. Indium films were heated in an inert atmosphere or in air until they reached a specified temperature and then oxidized in air at much higher temperatures. Crystallinity of the In2O3 thin film which was heat-treated in air from room temperature was quite poor. On the other hand, narrow X-ray rocking curves of the In2O3 films were obtained when the temperature was increased in an inert atmosphere to a specified tem-perature.