A. A. Istratov, T. Buonassisi, R. J. McDonald, A. R. Smith, R. Schindler, J. A. Rand, J. P. Kalejs and E. R. Weber, “Metal Content of Multicrystalline Silicon for Solar Cells and Its Impact on Minority Carrier Diffusion Length,” Journal of Applied Physics, Vol. 94, No. 10, November 2003, pp. 6552-6559.

has been cited by the following article:

• TITLE: Temperature Effects on the Electrical Performance of Large Area Multicrystalline Silicon Solar Cells Using the Current Shunt Measuring Technique

  AUTHORS: Hala Mohamed Abdel Mageed, Ahmed Faheem Zobaa, Mohamed Helmy Abdel Raouf, Abla Hosni Abd El-Rahman, Mohamed Mamdouh Abdel Aziz

  KEYWORDS: Large Area Multicrystalline Silicon Solar Cell, Current Shunt Measuring Technique, Temperature Effects, Short Circuit Current, Open Circuit Voltage, Accumulated Power, Incident Radiation

  JOURNAL NAME: Engineering, Vol.2 No.11, November 26, 2010

  ABSTRACT: The temperature effects on the electrical performance of a large area multicrystalline silicon solar cell with back-contact technology have been studied in a desert area under ambient conditions using the current shunt measuring technique. Therefore, most of the problems encountered with traditional measuring techniques are avoided. The temperature dependency of the current shunt from 5ºC up to 50ºC has been investigated. Its temperature coefficient proves to be negligible which means that the temperature dependency of the solar cell is completely independent of the current shunt. The solar module installed in a tilted position at the optimum angle of the location, has been tested in two different seasons (winter and summer). The obtained solar cell short circuit current, open circuit voltage and output power are correlated with the measured incident radiation in both seasons and all results are discussed.