A Cuevas, P. A. Basore, M. C. Girouit and C. Dubois, “Surface Recombination Velocity of Highly Doped n-Type Silicon,” Journal of Applied Physics, Vol. 80, No. 6, 1966, p. 3370. doi:10.1063/1.363250

has been cited by the following article:

• TITLE: The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer

  AUTHORS: Mohamed K. El-Adawi, Najla S. Al-Shameri

  KEYWORDS: Efficiency; Diffusion Equation; Recombination Velocity

  JOURNAL NAME: Optics and Photonics Journal, Vol.2 No.4, December 31, 2012

  ABSTRACT: The role of the carrier’s recombination velocity Si within the depletion Layer of p-n junction solar cell and the external bias voltage Va across the junction in determining the current density “J” through the cell is revealed. The unsteady carrier diffusion equation is solved under illumination conditions considering a source spectral function G(λ). The efficiency of the device as a function of Si , Va , G(λ) is obtained. Computations considering a silicon solar cell are given as an illustrative example.