H. Inokawa and Y. Takahashi, “A Compact Analytical Model for Asymmetric Single-Electron Tunneling Transistors,” IEEE Transactions on Electron Devices, Vol. 50, No. 2, 2003, pp. 455-461. Hdoi:10.1109/TED.2002.808554

has been cited by the following article:

• TITLE: New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature

  AUTHORS: Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi

  KEYWORDS: Single-Electron Transistor (SET); Master Equation; Orthodox Theory; Tunnel Current; Thermionic Current; SIMON

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.2 No.4, December 11, 2012

  ABSTRACT: We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.