J. Osvald, “Electronic Properties of a near Surface Si δ-Doped GaAs under an Applied Electric Field,” Journal of Physics D: Applied Physics, Vol. 37, No. 19, 2004, p. 2655. doi:10.1088/0022-3727/37/19/007

has been cited by the following article:

• TITLE: Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer

  AUTHORS: Hassen Dakhlaoui

  KEYWORDS: Doped GaAs; Self-Consistently; The Intersubband Absorption

  JOURNAL NAME: Optics and Photonics Journal, Vol.2 No.3, September 20, 2012

  ABSTRACT: We study in this paper the intersubband optical absorption of Si doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solving the Schr?dinger and Poisson equations self-consistently. From our results, it is clear that the subband energies and intersubband optical absorption are quite sensitive to the applied electric field. Also our results indicate that the optical absorption depends not only on the electric field but also on the donor’s concentration. The results of this work should provide useful guidance for the design of optically pumped quantum well lasers and quantum well infrared photo detectors (QWIPs).