S. H. Lo, D. A. Buchanan and Y. Taur, “Modeling and Characterization of Quantization, Polysilicon Depletion, and Direct Tunneling Effects in MOSFETs with Ultrathin Oxides,” IBM Journal of Research and Development, Vol. 43, No. 3, 1999, pp. 327-337. doi:10.1147/rd.433.0327

has been cited by the following article:

• TITLE: Nanocapacitor with a Cantor Multi-Layered Structure

  AUTHORS: Rubén Montelongo, David González, Ricardo Bustos, Gabriel González

  KEYWORDS: Nanocapacitor; Cantor Structure; Schrodinger-Poisson Equation

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.9, September 24, 2012

  ABSTRACT: We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.