A M. Suhail, H. J. Kbashi and R. K. Jamal, “Three-Pho- ton Absorption in Nanostructure Wide-Band Gap Semiconductor ZnO Using Femtosecond Laser,” Modern Applied Science, Vol. 5, No. 6, 2011, pp. 199-210. Hdoi:10.5539/mas.v5n6p199

has been cited by the following article:

• TITLE: Three-Photon Absorption in Zno Film Using Ultra Short Pulse Laser

  AUTHORS: Raied K. Jamal, Mohammed T. Hussein, Abdulla M. Suhail

  KEYWORDS: Multiphoton Processes; ZnO Nanocrystalline; Nonlinear Optics

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.8, August 14, 2012

  ABSTRACT: The three-photon absorption (3PA) in nanostructure wide-band gap ZnO semiconductor material is observed under high intensity femtosecond Titanium-Sapphire laser of 800 nm wavelength excitation. The ZnO film was prepared by chemical spray pyrolysis technique with substrate temperature of 400℃. The optical properties concerning the absorp-tion, transmission, reflection, Raman and the photoluminescence spectra are studied for the prepared film. The structure of the ZnO film was tested with the X-Ray diffraction and it was found to be a polycrystalline with recognized peaks oriented in (002), and (102). The measured of three photon absorption coefficient was found to be about 0.0166 cm3/Gwatt2, which is about five times higher than the bulk value. The fully computerized z-scan system was used to measure the nonlinear coefficients from the Gaussian fit of the transmitted laser incident.