K. S. Son, D. L. Choi, H. N. Lee and W. G. Lee, “The Interfacial Reaction between ITO and Silicon Nitride Deposited by PECVD in Fringe Field Switching Device,” Current Applied Physics, Vol. 2, No. 3, 2002, pp. 229-232. doi:10.1016/S1567-1739(02)00092-5

has been cited by the following article:

• TITLE: Current-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces

  AUTHORS: Gopal G. Pethuraja, Roger E. Welser, Ashok K. Sood, Changwoo Lee, Nicholas J. Alexander, Harry Efstathiadis, Pradeep Haldar, Jennifer L. Harvey

  KEYWORDS: Sputtered Amorphous Silicon; Electrical Contact Characteristics; ITO/Si Contact

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.2 No.2, June 20, 2012

  ABSTRACT: We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices.