L. M. Woods, D. H. Levi, V. Kaydonov, G. Y. Robinson, and R. K. Ahrenkiel, “Electrical Characterization of CdTe Grain Boundary Properties from as-Processed CdTe/CdS Solar Cells,” 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, pp. 1043-1049.

has been cited by the following article:

• TITLE: The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell

  AUTHORS: Wagah F. Mohammad

  KEYWORDS: CdTe Solar Cells; CdTe/Si Heterojunction; In-Doped CdTe

  JOURNAL NAME: Circuits and Systems, Vol.3 No.1, December 31, 2011

  ABSTRACT: The In-doped CdTe/Si (p) heterostruture was fabricated and its electrical and photoelectrical properties were studied and interpreted. During the fabrication processes of CdTe/Si heterojunction, some practical troubles were encountered. However, the important one was the formation of the SiO2 thin oxide layer on the soft surface of the Si during the formation of the back contact. The silicon wafer was subjected to different chemical treatments in order to remove the thin oxide layer from the silicon wafer surfaces. It was found that the heterojunction with Si (p+) substrate gave relatively high open circuit voltage comparing with that of Si (p) substrate. Also an electroforming phenomenon had been observed in this structure for the first time which may be considered as a memory effect. It was observed that there are two states of conduction, non-conducting state and conducting state. The normal case is the non-conducting state. As the forward applied voltage increased beyond threshold value, it switches into the conducting state and remains in this state even after the voltage drops to zero.