Abdelkader, D., Khemiri, N. and Kanzari, M. (2013) The Effect of Annealing on the Physical Properties of Thermally Evaporated CuIn2n+1S3n+2 Thin Films (n=0, 1, 2 and 3). Effect of Annealing on the Structural and Optical Properties of In2S3 Films. Materials Science in Semiconductor Processing, 16, 1997-2004.
https://doi.org/10.1016/j.mssp.2013.07.029

has been cited by the following article:

• TITLE: Effect of Substrate Nature on the Structural, Optical and Electrical Properties of In2S3 Thin Films

  AUTHORS: Fethi Aousgi, Youssef Trabelsi, Aoussaj Sbai, Billel Khalfallah, Radhouane Chtourou

  KEYWORDS: In2S3, Vacuum Evaporation, Thin Films, X-Ray Diffraction, UV-Vis Spectrophotometer, Photovoltaic

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.10 No.5, May 17, 2022

  ABSTRACT: In this study, In2S3 thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In2S3 and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.