TITLE:
Improving the Light Extraction Efficiency of GaN-Based Light-Emitting Diode
AUTHORS:
Lianjun Zhang, Zhongqi Fan, Gang Liu
KEYWORDS:
Light Emitting Diodes, Light Extraction Efficiency, Photonic Crystals, Epitaxial Lateral Overgrowth
JOURNAL NAME:
World Journal of Engineering and Technology,
Vol.9 No.2,
May
10,
2021
ABSTRACT: The light extraction efficiency caused by total internal reflection is low. Based on the analysis of the existing technology, a new design scheme is proposed in this paper to improve the light extraction efficiency. The air gap photonic crystal is embedded on the GaN-based patterned sapphire substrate, which can reduce line misalignment and improve light extraction efficiency. The internal structure of the GaN-based LED epitaxial layer is composed of an electron emission layer, a quantum well in the light-emitting recombination region, and an electron blocking layer. Experimental results show that this method significantly improves the extraction efficiency of LED light.